Toshiba Unveils 100V N-Channel MOSFET to Improve Power Efficiency
Pune, India | September 29, 2025
Toshiba Electronic Devices & Storage Corporation has introduced the TPH2R70AR5, a high-performance 100V N-channel power MOSFET built on its latest U-MOS11-H process. This new MOSFET targets improved efficiency in switched-mode power supplies (SMPS) for data centers, communication infrastructures, and industrial sectors. Shipments have already started globally.
The TPH2R70AR5 offers significant advances in power conversion efficiency compared to previous-generation devices. It achieves approximately 8% lower drain-source on-resistance (Rₒₙ) and 37% reduced total gate charge (Qg) versus Toshiba’s older U-MOSX-H products. Consequently, this results in a 42% reduction in the Rₒₙ × Qg figure of merit, meaning it lowers both conduction and switching losses. Such enhancements directly improve energy efficiency in demanding power systems.
Moreover, the device features Toshiba’s proprietary lifetime control technology, which reduces the reverse recovery charge (Q_rr) of the body diode by 38%. It also improves the Rₒₙ × Q_rr parameter by 43%, essential for high-speed switching applications where diode recovery influences overall circuit performance and thermal management.
The TPH2R70AR5 comes in a compact SOP Advance (N) package that provides excellent thermal dissipation while fitting standard mounting footprints. This design allows engineers to integrate the MOSFET into existing board layouts without requiring major redesigns, facilitating easy adoption.
In addition, Toshiba offers comprehensive simulation models to support development with this MOSFET. These models include a G0 SPICE model for fast circuit prototyping and a G2 SPICE model for high-accuracy simulations. Such tools help designers analyze switching behavior under different load conditions, accelerating development and ensuring design dependability.
Toshiba highlights that the TPH2R70AR5 delivers industry-leading trade-off characteristics well-suited for power conversion systems that demand high efficiency and low power loss. Applications like data centers and 5G base stations, where energy consumption drives operational costs, benefit greatly from these improvements by reducing total power usage and thermal stress.
As global industries increasingly pursue more sustainable energy practices, the demand for low-loss power semiconductors continues to rise. Toshiba’s U-MOS11-H platform represents a strategic effort to meet both technical performance requirements and environmental objectives simultaneously.
Looking ahead, Toshiba plans to expand its low-loss MOSFET portfolio by introducing devices in varying voltage classes based on the U-MOS11-H technology. Furthermore, the company remains dedicated to providing extensive design support tools, which help developers optimize power solutions quickly and efficiently.
In summary, the TPH2R70AR5 MOSFET introduces notable improvements in on-resistance, gate charge, and diode recovery characteristics within a compact, thermally efficient package. This launch underscores Toshiba’s ongoing commitment to advancing power device technology, enabling higher efficiency, improved thermal performance, and easier system integration for industrial and infrastructure markets.
Through this next-generation device, Toshiba strengthens its leadership in the competitive semiconductor market and supports global efforts to enhance energy efficiency in critical electronic systems worldwide.
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